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SSD|SAMSUNG|990 EVO Plus|4TB|M.2|PCIe Gen5|NVMe|TLC|Write speed 6300 MBytes/sec|Read speed 7250 MBytes/sec|2.38mm|TBW 2400 TB|MZ-V9S4T0BW

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Spectacular speed everyday
Blast through tasks faster. 990 EVO Plus with the latest NAND offers boosted sequential read/write speeds up to 7,250/6,300MB/s. Huge files, instant transfer.

Keep cool and power through your day
Optimised efficiency, extended performance. The nickel-coated controller increases MB/s per Watt by 73% compared to the 990 EVO, achieving the same power level and thermal control with less power consumption. Stay focused on work or play without worrying about overheating or battery life.

Extra space. Extra speed.
Harness the full power of your drive with enhanced Intelligent TurboWrite 2.0. Process massive data faster and breeze through heavy graphics with an enlarged TurboWrite region, now available in 4TB capacity.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

Performance
Up to 7,250MB/s of sequential read speed, 45% faster speed than the previous model, the 990 EVO.

Power efficiency
Power efficiency enhanced by 73% compared to the 990 EVO for more MB/s per watt, while maintaining performance and thermal control.

Versatility
Up to 4TB capacity and rapid Intelligent TurboWrite 2.0.

  • Supported by the latest PCIe® 4.0 x4 and PCIe® 5.0 x2 interfaces, offering flexibility for current and future computing.
  • Sequential read speeds of up to 7,250MB/s to meet the demands of business and creative work.
  • Available in different capacities up to 4TB.
  • Power efficient design puts less burden on your PC's battery life.
  • Smart thermal solution provides consistent and reliable performance.
  • Five year limited warranty.

Tootja SAMSUNG
Tootekood MZ-V9S4T0BW
EAN 8806095575667
Google link lisainfo
Garantiiaeg 36 kuud
.: Disain :.
Komponent PC
SSD series 990 EVO Plus
Keskmine tõrkeintervall (MTBF) 1500000 h
Tootja koduleht https://www.samsung.com/uk/memory-storage/nvme-ssd/990-evo-plus-4tb-nvme-pcie-gen-4-mz-v9s4t0bw/
Funktsioonid
SSD ketta maht 4000 GB
SSD-ketta mõõtmed M.2
Ketta paksus 2.38mm
Kujutegur M.2
Pooljuhtketta maht 4 TB
Liides PCI Express 4.0
Mälu tüüp V-NAND TLC
NVMe Jah
Lugemise kiirus 7250 MB/s
Juhuslik lugemine (4 kB) 850000 IOPS
Kirjutamise kiirus 6300 MB/s
Juhuslik kirjutamine (4 kB) 1350000 IOPS
TBW 2400 TB
Turvaalgoritmid 256-bit AES
S.M.A.R.T.-tugi Jah
TRIM-tugi Jah
.: Võimsus :.
Võimsustarve (kirjutamisel) 4.8 W
Töötingimused
Kasutamistemperatuur (T-T) 0 - 70 °C
.: Kaal ja mõõtmed :.
Laius 80.15 mm
Sügavus 2,38 mm
Kõrgus 22,1 mm
Mõõtmed (l x s x k) 80.15 x 22.15 x 2.38 mm
Kaal 9 g
Toote kaal 9 g
Muud näitajad
NVMe version 2.0
Security algorithms 256-bit AES
SSD form factor M.2
TRIM support Jah
S.M.A.R.T. support Jah
Power consumption DevSlp (device sleep) 5 mW
NVMe versioon 2.0
Unit Box Height 0.02
Unit Box Length 0.145
Unit Box Width 0.1
CnCode 84717098
M.2 SSD suurus 2280 (22 x 80 mm)
PCIe Gen5 Jah
Units per Shipping Box 10
Unit Calculated Volume 0.0006384 cubm
Product Net Weight 0.009 kg
Unit Calculated Weight 0.09 kg
Summary Samsung MZ-V9S4T0. SSD capacity: 4 TB, SSD form factor: M.2, Read speed: 7250 MB/s, Write speed: 6300 MB/s, Component for: PC
M.2 SSD size 2280 (22 x 80 mm)
DevSlp (device sleep) support Jah
Component for PC
Riistvara krüpteerimine Jah
Hardware Encryption Jah
Mean time between failures (MTBF) 1500000 h
Sisemälu tüüp V-NAND TLC
Mudel MZ-V9S4T0BW
NAND flash technology TLC
Operating shock 1500 G
Operating voltage 3.3 V
Power consumption (idle) 0.06 W
Power consumption (read) 5.5 W
Random read (4KB) 1050000 IOPS
Random write (4KB) 1400000 IOPS

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